NTR4170N
PACKAGE DIMENSIONS
SOT ? 23 (TO ? 236)
CASE 318 ? 08
ISSUE AP
3
D
SEE VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
E
A
A1
1
e
2
b
H E
L
L1
VIEW C
q
c
0.25
MILLIMETERS
DIM MIN NOM MAX
A 0.89 1.00 1.11
A1 0.01 0.06 0.10
b 0.37 0.44 0.50
c 0.09 0.13 0.18
D 2.80 2.90 3.04
E 1.20 1.30 1.40
e 1.78 1.90 2.04
L 0.10 0.20 0.30
L1 0.35 0.54 0.69
H E 2.10 2.40 2.64
q 0 ° ??? 10 °
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0 °
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
???
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10 °
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.037
2.0
0.079
0.9
0.035
0.8
SCALE 10:1
mm
inches
0.031
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT :
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 Toll Free USA/Canada
Fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 Toll Free USA/Canada
Email : orderlit@onsemi.com
N. American Technical Support : 800 ? 282 ? 9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81 ? 3 ? 5817 ? 1050
http://onsemi.com
5
ON Semiconductor Website : www.onsemi.com
Order Literature : http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTR4170N/D
相关PDF资料
NTR4171PT3G MOSFET P-CH 30V 2.2A SOT23-3
NTR4501NT1 MOSFET N-CHAN 3.2A 20V SOT-23
NTR4502PT1G MOSFET P-CH 30V 1.13A SOT-23
NTR4503NT3G MOSFET N-CH 30V 1.5A SOT-23
NTS2101PT1 MOSFET P-CH 8V 1.4A SOT-323
NTS4001NT1 MOSFET N-CH 30V 270MA SOT-323
NTS4101PT1 MOSFET P-CH 20V 1.37A SOT-323
NTS4172NT1G MOSFET N-CH 30V 1.6A SC70-3
相关代理商/技术参数
NTR4171P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23
NTR4171PT1G 功能描述:MOSFET PFET SOT23 30V TR 0.075R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4171PT3G 功能描述:MOSFET PFET SOT23 30V 0.075R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4501N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23
NTR4501NST1G 制造商:ON Semiconductor 功能描述:NFET SOT23 20V 3.2A 80MO - Tape and Reel 制造商:ON Semiconductor 功能描述:MOSFET NFET SOT23 20V 3.2A 80MO 制造商:ON Semiconductor 功能描述:REEL / NFET SOT23 20V 3.2A 80MO
NTR4501NT1 功能描述:MOSFET 20V 3.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4501NT1G 功能描述:MOSFET 20V 3.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4501NT1G-CUT TAPE 制造商:ON 功能描述:NTR Series N-Channel 20 V 70 mOhm 1.25 W Surface Mount Power MOSFET - SOT-23